IEC 60146-1-2 pdf download

IEC 60146-1-2 pdf download.Semiconductor converters – General requirements and line commutated converters
1 Scope
This part of IEC 601 46 gives guidance on variations to the specifications given in IEC 601 46-1 -1 :2009 to enable the specification to be extended in a controlled form for special cases. Background information is also given on technical points which should facilitate the use of IEC 601 46-1 -1 :2009. This technical report primarily covers line commutated converters and is not in itself a specification, except as regards certain auxiliary components, in so far as existing standards may not provide the necessary data.
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 601 46-1 -1 :2009, IEC 60050-551 , IEC 60050-551 -20, several of which are repeated here for convenience, and the following apply.3.1 Definitions related to converter faults 3.1.1 breakthrough failure by which a controllable valve device or an arm consisting of such devices loses its ability to block voltage during the forward blocking interval [IEC 60050-551 :1 998, 551 -1 6-60] NOTE See Figure 1 a). Breakthrough can occur in rectifier operation as well as inverter operation and for various reasons, for example excessive junction temperature, voltage surges in excess of rated peak off-state voltage, excessive rate of rise of off-state voltage or spurious gate current. 3.1.2 false firing firing of a latching valve device or an arm consisting of such devices at an incorrect instant [IEC 60050-551 :1 998, 551 -1 6-63] 3.1.3 breakdown (of an electronic valve device or of a valve arm) failure that permanently deprives an electronic valve device or a valve arm of its property to block voltage [IEC 60050-551 :1 998, 551 -1 6-66] 3.1.4 firing failure failure to achieve conduction in a latching valve device or an arm consisting of such devices during the conduction interval [IEC 60050-551 :1 998, 551 -1 6-65] NOTE See Figure 1 b) 3.1.5 conduction through in inverter operation, the situation that a valve arm continues conduction at the end of the normal conduction interval or at the end of the hold-off interval [IEC 60050-551 :1 998, 551 -1 6-64] NOTE See Figure 1 c)3.1.6 commutation failure failure to commutate the current from a conducting arm to the succeeding arm [IEC 60050-551 :1 998, 551 -1 6-59]3.2 Definitions related to converter generated transients 3.2.1 d.c. side transients voltage transients produced by rapid changes of the d.c. voltage applied to the inductance and capacitance of the d.c. circuit NOTE See 7.4 3.2.2 commutation transients on the line (repetitive transient) voltage transients produced on the a.c. line after commutation NOTE See 7.4 3.3 Definitions related to temperature 3.3.1 thermal resistance R th quotient of the difference between the virtual junction temperature and the temperature of a specified external reference point, by the steady-state power dissipation in the device under conditions of thermal equilibrium [IEC 60050-521 :2002, 521 -05-1 3, modified]NOTE For most cases, the power dissipation can be assumed to be equal to the heat flow. 3.3.2 transient thermal impedance Z th Quotient of a) variation of the temperature difference, reached at the end of a time interval between the virtual junction temperature and the temperature of a specified external reference point, and b) step function change of power dissipation at the beginning of the same time interval causing the change of temperature. Immediately before the beginning of this time interval, the distribution of temperature should have been constant with time. NOTE Transient thermal impedance is given as a function of the time interval. 3.3.3 virtual (equivalent) junction temperature T j virtual temperature of the junction of a semiconductor device [IEC 60050-521 :2002, 521 -05-1 5] NOTE 1 The virtual junction temperature is not necessarily the highest temperature in the semiconductor device. NOTE 2 Based on the power dissipation and the thermal resistance or transient thermal impedance that corresponds to the mode of operation, the virtual junction temperature can be calculated using a specified relationship. 3.3.4 virtual temperature internal equivalent temperature (of a semiconductor device) theoretical temperature which is based on a simplified representation of the thermal and electrical behaviour of the semiconductor device [IEC 60050-521 :2002, 521 -05-1 4]